BUAF Transistor Datasheet pdf, BUAF Equivalent. Parameters and Characteristics. isc website： isc & iscsemi is registered trademark. 1 isc Silicon NPN Power Transistor. BUAF. DESCRIPTION. ·Collector-Emitter. BUAF STMicroelectronics Bipolar Transistors – BJT NPN Power Transistor datasheet, inventory, & pricing.
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Computers and Peripherals Data Center.
Key Features Fully insulated power package U. No commitment taken to produce Proposal: Product is in design stage Target: Selectors Simulators and Models.
BU508AF Datasheet PDF
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ST Code of Conduct Blog. All diminsions in mm. No commitment taken to design or produce NRND: Base Emitter Saturation Voltage.
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CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. Max Operating Junction Temperature. Collector Cut off Current. Support Center Complete list and gateway to support services and resource pools.
No bj508af reported, please contact our Sales office. Search field Part name Part description. Collector Emitter Saturation Voltage. Media Subscription Media Contacts.
BUAF NTE Equivalent NTE TRANSISTOR NPN SILIC – Wholesale Electronics
General terms and conditions. Product is in volume production Evaluation: It is recommended that you completely review our Data Sheet s so as to confirm that the Device s meet functionality parameters for your application. Getting started with eDesignSuite 5: Product is in volume production only to support customers ongoing production.
The BUAF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage. Menu Products Explore our product portfolio.
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Collector Emitter Sustaining Voltage. IoT for Smart Things. Product is under characterization. Product is in volume production.